Skip to main content
STMicroelectronics STB28N60DM2

STMicroelectronics STB28N60DM2

MPNSTB28N60DM2
End of Life

MOSFET N-CH 600V 21A D2PAK

$3.61Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB28N60DM2 specifications
ParameterValue
SeriesMDmesh™ DM2
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C21A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs160mOhm @ 10.5A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1500 pF @ 100 V