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STMicroelectronics STB270N4F3

STB270N4F3 N-Channel MOSFET, 40 V 160 A, 2.5 mOhm, AEC-Q101

MPNSTB270N4F3
End of Life

STMicroelectronics STripFET™ III, N-Channel MOSFET, 40 V, 160 A, 2.5 mOhm @ 80 A, 10 V, 150 nC gate charge, D2PAK, -55°C to +175°C, AEC-Q101.

$4.45Ref. price · indicative, final on quote
STMicroelectronics STB270N4F3 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesSTripFET™ III
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB270N4F3 specifications
ParameterValue
SeriesSTripFET™ III
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C160A (Tc)
Power dissipation330W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs2.5mOhm @ 80A, 10V
Gate charge (Qg) (Max) @ vgs150 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7400 pF @ 25 V

Product details

40 V, 160 A N-channel in D2PAK — the conduction-loss benchmark

STB270N4F3 is an N-channel 40 V, 160 A MOSFET with 2.5 mOhm maximum on-resistance at 80 A, 10 V gate drive.

Gate charge and switching-loss trade-off

The 4 V threshold at 250 µA is consistent across the STripFET III automotive family.

Automotive qualification — AEC-Q101 and 175°C junction

AEC-Q101 qualification covers stress tests for automotive electronics. The 175°C maximum junction gives thermal margin in under-hood environments.

Package and mounting — D2PAK thermal pad

Supplied in the TO-263-3 (D²Pak) surface-mount package with a tab that is the drain connection. The standard D2PAK footprint is shared with the STB80N4F6AG and STB85NF55T4.

Frequently asked questions

Is STB270N4F3 AEC-Q101 qualified?

Yes, STB270N4F3 carries AEC-Q101 qualification, making it suitable for automotive-grade applications including under-hood and chassis-domain power stages.

What is the Rds(on) of STB270N4F3 at 10 V?

Maximum Rds(on) is 2.5 mOhm at 80 A drain current with 10 V gate drive. This is the lowest on-resistance in the 40 V STripFET III D2PAK family.