STMicroelectronics STB26NM60N, MDmesh™ II N-Channel MOSFET, 600 V Vdss, 20 A Id, 165 mOhm Rds(on), 60 nC Qg, TO-263-3 (D²Pak), Surface Mount.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 20A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 165mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 60 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1800 pF @ 50 V |
The STB26NM60N: 600 V drain-source rating and 20 A continuous drain current.
Input capacitance is 1800 pF at 50 V drain-source. Gate charge is 60 nC at 10 V. Power dissipation is 140 W at the case. Maximum junction temperature is 150 °C.
This is the conduction loss figure used for thermal and efficiency calculations in the power stage.