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STMicroelectronics STB25N80K5

STB25N80K5 MOSFET N-CH 800V 19.5A D2PAK SuperMESH5

MPNSTB25N80K5
End of Life

STMicroelectronics SuperMESH5™ N-Channel MOSFET, 800V Vdss, 19.5A Id, 260mOhm Rds(on) at 10V, D²PAK (TO-263) surface mount, -55°C to 150°C.

$6.08Ref. price · indicative, final on quote
STMicroelectronics STB25N80K5 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB25N80K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C19.5A (Tc)
Power dissipation250W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs260mOhm @ 19.5A, 10V
Gate charge (Qg) (Max) @ vgs40 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1600 pF @ 100 V

Product details

800 V, 19.5 A N-channel — the rail it switches

The STB25N80K5 is an 800 V, 19.5 A N-channel MOSFET from the SuperMESH5 series.

Switching losses — gate charge and capacitance

Maximum gate charge is 40 nC at Vgs = 10 V, with input capacitance (Ciss) of 1600 pF at Vds = 100 V.

On-resistance and thermal budget

Rds(on) is 260 mOhm maximum at Id = 19.5 A and Vgs = 10 V. Maximum power dissipation is 250 W at case temperature.

Package and footprint — D²PAK (TO-263)

The STB25N80K5 comes in a TO-263-3 (D²PAK) surface-mount package with two leads and a tab.

It is ROHS3 compliant. For ongoing production builds, there is no last-time-buy risk.

Frequently asked questions

What is the Rds(on) of STB25N80K5?

Maximum on-resistance is 260 mOhm at Id = 19.5 A and Vgs = 10 V. That figure is at 25 °C junction; expect it to roughly double at 125 °C junction temperature.