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STMicroelectronics STB23N80K5

STB23N80K5 MOSFET N-CH 800V 16A D2PAK, MDmesh K5

MPNSTB23N80K5
End of Life

STMicroelectronics MDmesh K5 series, N-Channel MOSFET, 800 V drain-source, 16 A continuous drain at 25°C, 280 mOhm Rds(on) at 10 V, 33 nC gate charge, D²PAK (TO-263) surface-mount package, -55°C to 150°C junction temperature.

$5.06Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB23N80K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C16A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs280mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs33 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 100 V

Product details

800 V N-channel in D²PAK — the high-voltage switching workhorse

The STB23N80K5 is an N-channel MOSFET in a D²PAK (TO-263) surface-mount package. The 800 V rating gives 50% derating margin on a typical 400 V DC bus (PFC output or rectified 230 VAC), which is the conventional practice for reliable off-line power supplies. The 16 A continuous rating is package-limited at 25°C case; at a 100°C case temperature the current must be derated per the SOA curve in the datasheet, and the 190 W power dissipation ceiling (Tc) sets the heatsink requirement.

Conduction and switching numbers that drive the thermal budget

Input capacitance Ciss is 1000 pF typical at 100 V drain-source bias, which influences the turn-on delay and the driver's peak current requirement. The maximum gate-source voltage is ±30 V.

ROHS3 compliant, no exemptions. For a production line that needs a clean 800 V N-channel with a standard D²PAK footprint and active lifecycle, this is a straightforward BOM fit.

Frequently asked questions

What are the Rds(on) and gate charge of STB23N80K5?

Total gate charge is 33 nC at 10 V. These two numbers define the conduction and switching losses for the thermal design.