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STMicroelectronics STB17N80K5

STB17N80K5 N-Channel MOSFET, 800V 14A D2PAK

MPNSTB17N80K5
End of Life

STMicroelectronics STB17N80K5, MDmesh™ K5 series, N-Channel MOSFET, 800V Vdss, 14A Id, 340mOhm Rds(on) @ 10V, 26nC Qg, D²PAK (TO-263), -55°C to 150°C.

$4.78Ref. price · indicative, final on quote
STMicroelectronics STB17N80K5 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB17N80K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C14A (Tc)
Power dissipation170W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs340mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs26 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds866 pF @ 100 V

Product details

800V N-channel MOSFET for switched-mode power conversion

Gate charge totals 26 nC at 10 V.

Switching and drive characteristics

Input capacitance measures 866 pF at 100 V drain-source bias. That is a moderate figure for an 800 V MOSFET, keeping the Miller plateau charge low enough that the device does not require a bootstrap driver with exceptionally high peak current. The ±30 V maximum gate-source rating gives margin for ringing on the gate node in hard-switched topologies.

Mounting is surface-mount only. The TO-263-3 (D²Pak) footprint is standard and shares land pattern with many 800 V MOSFETs in this package, simplifying board layout if a second-source qualification is needed later.

ROHS3 compliance is confirmed, with no exemptions that would limit its use in new EU-market designs. The MDmesh™ K5 series is an established portfolio.

Frequently asked questions

What is the Rds(on) of STB17N80K5 at 10V?

The maximum on-resistance is 340 mOhm at 10 V gate drive with 7 A drain current. This is the specified Rds(on) at the recommended drive voltage of 10 V.

What is the equivalent or replacement for STB17N80K5?

A direct pin-compatible equivalent from the same series would be another MDmesh™ K5 device in the D²PAK package with matching 800 V rating. For a functional replacement, the MDmesh™ K6 or M6 series devices with similar voltage and current ratings in TO-263 are worth evaluating, though gate charge and on-resistance specifications differ and should be checked against your design's switching loss and thermal budget.