STMicroelectronics STripFET™ II STB170NF04, N-Channel MOSFET, 40 V Vdss, 80 A Id, 5 mOhm Rds(on) at 10 V, 170 nC Qg, D²PAK (TO-263) surface mount, -55°C to 175°C.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 80A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 5mOhm @ 40A, 10V |
| Gate charge (Qg) (Max) @ vgs | 170 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 9000 pF @ 25 V |
This moderate gate charge means a gate-driver capable of sourcing 1 A peak can switch the FET in the tens of nanoseconds; the designer should budget gate-drive power as Qg × Vgs × fsw for the target frequency.
The STB170NF04 is supplied in the D²PAK (TO-263) surface-mount package, a 2-lead plus tab design.
The D²PAK package is designed to dissipate heat through the exposed drain tab soldered to a PCB copper plane. For continuous operation at high current, a heatsink or adequate PCB copper area is recommended to keep the junction temperature within the -55°C to 175°C range.