STB16N90K5

STMicroelectronics · MDmesh™ K5 Series

STMicroelectronics STB16N90K5, MDmesh™ K5 series, N-Channel MOSFET, 900 V Vdss, 15 A continuous drain, 330 mOhm Rds(on) at 10 V, 29.7 nC gate charge, D²Pak (TO-263) surface mount, -55 to 150 °C.

STMicroelectronics STB16N90K5
Download datasheet (PDF)
[IN STOCK] In Stock: 9 pcs
$11.27/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STB16N90K5 specifications
Parameter / AttributeSpecification / Value
SeriesMDmesh™ K5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs330mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs29.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1027 pF @ 100 V

Technical details

900 V N-channel in a D²Pak — where it fits

The 900 V Vdss gives it the headroom needed in offline flyback converters, PFC boost stages, and auxiliary power supplies where 600 V parts would be marginal on the bus voltage peaks.

Conduction and switching — the numbers that matter

Total gate charge at 10 V is 29.7 nC, and input capacitance at 100 V drain-source is 1027 pF. The low Qg relative to the 900 V class means the gate driver's reactive load is light enough to support switching frequencies in the 100 kHz range without excessive drive losses.

ROHS3 compliant per.

STB16N90K5
[ALLOC] verified
Quote