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STMicroelectronics STB16N90K5

STB16N90K5 MOSFET N-Ch 900V 15A D²Pak, MDmesh K5

MPNSTB16N90K5
End of Life

STMicroelectronics STB16N90K5, MDmesh™ K5 series, N-Channel MOSFET, 900 V Vdss, 15 A continuous drain, 330 mOhm Rds(on) at 10 V, 29.7 nC gate charge, D²Pak (TO-263) surface mount, -55 to 150 °C.

$6.64Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™ K5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB16N90K5 specifications
ParameterValue
SeriesMDmesh™ K5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage900 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C15A (Tc)
Power dissipation190W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs330mOhm @ 7.5A, 10V
Gate charge (Qg) (Max) @ vgs29.7 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1027 pF @ 100 V

Product details

900 V N-channel in a D²Pak — where it fits

The 900 V Vdss gives it the headroom needed in offline flyback converters, PFC boost stages, and auxiliary power supplies where 600 V parts would be marginal on the bus voltage peaks.

Conduction and switching — the numbers that matter

Total gate charge at 10 V is 29.7 nC, and input capacitance at 100 V drain-source is 1027 pF. The low Qg relative to the 900 V class means the gate driver's reactive load is light enough to support switching frequencies in the 100 kHz range without excessive drive losses.

ROHS3 compliant per.

Frequently asked questions

Is STB16N90K5 obsolete or active?

Active.

What is the Rds(on) of STB16N90K5?

This is the spec to use for worst-case conduction loss calculations.