STMicroelectronics STripFET™ II STB150NF55T4, N-Channel MOSFET, 55 Vdss, 120 A Id, 6 mOhm Rds(on) at 60 A, 10 V, 190 nC Qg, D2PAK (TO-263), -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 120A (Tc) |
| Power dissipation | 300W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 6mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 190 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4400 pF @ 25 V |
The 6 mOhm Rds(on) at 60 A, 10 V is the conduction-loss baseline at 25 °C junction.
Surface-mount in a TO-263-3 (D2PAK) package, the large exposed tab requires a solder-paste stencil aperture that covers at least 50% of the pad area for thermal transfer.