600 V, 13 A N-channel — SuperMESH™ switch for offline power
The STB13NK60ZT4 is an N-channel MOSFET from STMicroelectronics' SuperMESH™ series, rated for 600 V drain-source voltage and 13 A continuous drain current at 25 °C case temperature.
STB13NK60ZT4 N-Channel MOSFET, 600 V, 13 A, D2PAK
MPNSTB13NK60ZT4
End of Life
STMicroelectronics SuperMESH™, STB13NK60ZT4, N-Channel MOSFET, 600 Vdss, 13 A Id, 550 mOhm Rds(on), D2PAK, -55 to 150 °C.
$4.11Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesSuperMESH™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 13A (Tc) |
| Power dissipation | 150W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 550mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 92 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2030 pF @ 25 V |
Product details
Frequently asked questions
What are the specifications of STB13NK60ZT4?
It is an N-channel MOSFET rated at 600 V drain-source voltage, 13 A continuous drain current at 25 °C, 550 mOhm maximum on-resistance at 4.5 A and 10 V gate drive, 92 nC gate charge at 10 V, 2030 pF input capacitance at 25 V, and a junction temperature range of -55 to 150 °C. It comes in a D2PAK (TO-263) surface-mount package.
Is STB13NK60ZT4 pin compatible with STB13NK60Z?
Both parts share the same D2PAK (TO-263) footprint and are functionally the same die with the same 600 V / 13 A ratings. The T4 suffix typically denotes a specific packaging or tape-and-reel variant, so the pinout is identical. Confirm the gate charge and Rds(on) from the respective datasheets if your design is sensitive to switching losses.