STMicroelectronics MDmesh™ II Plus series, STB13N60M2, N-Channel MOSFET, 600 V Vdss, 11 A Id, 380 mOhm Rds(on), 17 nC Qg, D²Pak (TO-263), -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II Plus |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 380mOhm @ 5.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 580 pF @ 100 V |
Total gate charge is 17 nC at 10 V gate drive — a low figure that lets a standard gate driver or PWM controller switch the FET with minimal crossover losses. Input capacitance is 580 pF at 100 V drain-source, which together with the gate charge defines the switching speed boundary in a flyback or LLC converter.
Maximum on-resistance is 380 mOhm at 5.5 A drain current with 10 V gate drive. This is the figure to use for worst-case conduction loss calculations at the rated current.
This low value allows fast switching with modest gate drive current — a 10 V driver sourcing 1 A can charge the gate in under 20 ns.
Yes, it is ROHS3 compliant per the manufacturer's listing.