100 V, 110 A N-channel in D2PAK
The STB120NF10T4: 10.5 mOhm max on-resistance at 60 A, 10 V drive. D2PAK (TO-263-3) surface-mount case, 312 W power dissipation at the case.
Total gate charge is 233 nC at 10 V.
ROHS3 compliant.
STB120NF10T4 N-Channel MOSFET, 100V, 110A, D2PAK
MPNSTB120NF10T4
End of Life
STMicroelectronics STripFET™ II STB120NF10T4, N-Channel MOSFET, 100 V Vdss, 110 A Id, 10.5 mOhm Rds(on) at 60 A, 10 V, D2PAK (TO-263) surface mount, -55 to 175 °C.
$4.59Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesSTripFET™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | STripFET™ II |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 110A (Tc) |
| Power dissipation | 312W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 10.5mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 233 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5200 pF @ 25 V |
Product details
Frequently asked questions
Can STB120NF10T4 be used in automotive applications?
Verify with the manufacturer for specific automotive-grade requirements.