STB120N4LF6

STMicroelectronics · Automotive, AEC-Q101, DeepGATE™, STripFET™ VI Series

STMicroelectronics STB120N4LF6, N-Channel MOSFET, 40V Vdss, 80A Id, 4mOhm Rds(on) at 10V, 80nC Qg, D2PAK (TO-263), -55°C to 175°C, AEC-Q101.

STMicroelectronics STB120N4LF6
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[IN STOCK] In Stock: 5 pcs
$7.96/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

STB120N4LF6 specifications
Parameter / AttributeSpecification / Value
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4300 pF @ 25 V

Technical details

40V, 80A N-channel in D2PAK — the load-switch and motor-drive workhorse

It is housed in the D2PAK (TO-263) surface-mount package, a common footprint for automotive and industrial power stages that need a solderable tab for heat sinking.

AEC-Q101 qualification — the under-hood and chassis-domain gate

This part carries AEC-Q101 qualification, the automotive stress-test standard for discrete semiconductors.

The 4300 pF input capacitance (Ciss) at 25 V drain-source gives a rough Miller-plateau charge that a standard totem-pole gate driver handles without a pre-driver stage. The drive voltage is specified at both 5 V and 10 V, so logic-level gate signals from a 5 V MCU or PWM controller can switch the MOSFET into its minimum Rds(on) region.

It is ROHS3 compliant. No official successor or pin-compatible cross-reference is listed on the record, so the BOM line depends on this exact order code for the AEC-Q101 qualification and the D2PAK footprint.

STB120N4LF6
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