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STMicroelectronics STB120N4LF6

STB120N4LF6 N-Channel MOSFET, 40V 80A, AEC-Q101, D2PAK

MPNSTB120N4LF6
End of Life

STMicroelectronics STB120N4LF6, N-Channel MOSFET, 40V Vdss, 80A Id, 4mOhm Rds(on) at 10V, 80nC Qg, D2PAK (TO-263), -55°C to 175°C, AEC-Q101.

$2.93Ref. price · indicative, final on quote
STMicroelectronics STB120N4LF6 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB120N4LF6 specifications
ParameterValue
SeriesAutomotive, AEC-Q101, DeepGATE™, STripFET™ VI
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)5V, 10V
Current - continuous drain (Id) @ 25°C80A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs4mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs80 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4300 pF @ 25 V

Product details

40V, 80A N-channel in D2PAK — the load-switch and motor-drive workhorse

It is housed in the D2PAK (TO-263) surface-mount package, a common footprint for automotive and industrial power stages that need a solderable tab for heat sinking.

AEC-Q101 qualification — the under-hood and chassis-domain gate

This part carries AEC-Q101 qualification, the automotive stress-test standard for discrete semiconductors.

The 4300 pF input capacitance (Ciss) at 25 V drain-source gives a rough Miller-plateau charge that a standard totem-pole gate driver handles without a pre-driver stage. The drive voltage is specified at both 5 V and 10 V, so logic-level gate signals from a 5 V MCU or PWM controller can switch the MOSFET into its minimum Rds(on) region.

It is ROHS3 compliant. No official successor or pin-compatible cross-reference is listed on the record, so the BOM line depends on this exact order code for the AEC-Q101 qualification and the D2PAK footprint.

Frequently asked questions

Is STB120N4LF6 automotive qualified?

Yes, this MOSFET is AEC-Q101 qualified, the automotive stress-test standard for discrete semiconductors. It is part of ST's Automotive DeepGATE™ and STripFET™ VI series, rated for a -55 °C to 175 °C junction temperature range suitable for under-hood and chassis-domain applications.

What is the Rds(on) of STB120N4LF6 at 10V?

This figure is specified at 25 °C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet, which matters for thermal budget calculations at full load.