STMicroelectronics SuperMESH™ N-channel MOSFET, STB11NK40ZT4, 400 V Vdss, 9 A Id, 550 mOhm Rds(on) at 10 V, 32 nC Qg, D2PAK package, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 400 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 550mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 32 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 930 pF @ 25 V |
Housed in a TO-263-3 (D²Pak) surface-mount package with the tab as the drain connection. The D2PAK footprint requires a copper pad under the tab for the thermal path — the datasheet's 110 W power dissipation rating assumes that pad is soldered to a 1-inch-square copper island on a 2-layer board.
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