Skip to main content
Log in
STMicroelectronics STB10N60M2

STB10N60M2 MOSFET N-CH 600V 7.5A D2PAK, 600 mOhm Rds(on)

MPNSTB10N60M2
End of Life

STMicroelectronics MDmesh™ II Plus, N-Channel MOSFET, 600 V Vdss, 7.5 A Id at 25°C, 600 mOhm Rds(on) at 10 V, 13.5 nC Qg, D²PAK (TO-263) surface mount, -55°C to 150°C junction temperature.

$1.88Ref. price · indicative, final on quote
STMicroelectronics STB10N60M2 datasheet (PDF)
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesMDmesh™ II Plus
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB10N60M2 specifications
ParameterValue
SeriesMDmesh™ II Plus
FET typeN-Channel
MountingSurface Mount
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C7.5A (Tc)
Power dissipation85W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs13.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds400 pF @ 100 V

Product details

600 V, 7.5 A N-channel in D²PAK

STB10N60M2 is an N-channel 600 V, 7.5 A MOSFET in D²PAK (TO-263) surface-mount package.

Rds(on) is specified at 600 mOhm maximum at 3 A drain current with 10 V gate drive. The 13.5 nC typical gate charge at 10 V is low for a 600 V part — the MDmesh structure reduces the Miller plateau, so the gate driver sees less capacitive load during hard-switching transitions. Input capacitance is 400 pF at 100 V drain-source, keeping the drive current requirement modest for a controller with limited output drive.

Junction temperature and power dissipation

Frequently asked questions

What is the Rds(on) of STB10N60M2?

The maximum Rds(on) is 600 mOhm at 3 A drain current with 10 V gate drive. This is the conduction-loss spec for the part.