STMicroelectronics STB10LN80K5, MDmesh™ K5 series, N-Channel MOSFET, 800V Vdss, 8A Id, 630mOhm Rds(on), 15nC Qg, D²PAK (TO-263), -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 8A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 630mOhm @ 4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 427 pF @ 100 V |
15 nC gate charge at 10 V. 427 pF input capacitance at 100 V Vds.
It is ROHS3 compliant, so it meets the latest EU restriction directive without exemption. For a BOM line that needs an 800 V, 8 A surface-mount MOSFET, this part is a safe selection for both prototype and production builds — no last-time-buy risk to plan around.
The STB10LN80K5 is an N-channel MOSFET with 800 V drain-source breakdown, 8 A continuous drain current at 25°C case, 630 mOhm maximum on-resistance at 4 A and 10 V gate drive, 15 nC gate charge at 10 V, and 427 pF input capacitance at 100 V drain-source. The junction temperature range is -55°C to 150°C.
Yes, STB10LN80K5 is ROHS3 compliant, meeting the latest EU restriction directive without exemptions.
STB10LN80K5 is supplied in a D²PAK (TO-263) surface-mount package, specifically the TO-263-3 variant with 2 leads plus a drain tab. It is available in Tape & Reel or Cut Tape options.