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STMicroelectronics STB100N6F7

STMicroelectronics STB100N6F7

MPNSTB100N6F7
End of Life

MOSFET N-CH 60V 100A D2PAK

$1.84Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
SeriesSTripFET™ F7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STB100N6F7 specifications
ParameterValue
SeriesSTripFET™ F7
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C100A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs5.6mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs30 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1980 pF @ 25 V