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STMicroelectronics PD57018-E — Logic ICs

ST PD57018-E LDMOS RF Transistor, 945 MHz, 18 W

MPNPD57018-E
End of Life

STMicroelectronics PD57018-E LDMOS RF power transistor, 945 MHz, 18 W output, 16.5 dB gain, 65 V drain rating, 28 V test, 2.5 A, PowerSO-10 exposed pad, active, RoHS3.

$30.36Ref. price · indicative, final on quote
PackagingPowerSO-10 Exposed Bottom Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

PD57018-E specifications
ParameterValue
FET typeLDMOS
Voltage - test28 V
Voltage - rated65 V
Current - test100 mA
Current rating2.5A
Power - output18W
Frequency945MHz
Gain16.5dB
PackageTube
CasePowerSO-10 Exposed Bottom Pad

Product details

RF power transistor for 945 MHz infrastructure

The STMicroelectronics PD57018-E is an LDMOS RF power transistor designed for the 945 MHz band, delivering 18 W output power with 16.5 dB gain when tested at 28 V and 100 mA bias. The 65 V drain rating provides headroom for load mismatch and peak envelope power.

The PowerSO-10 exposed bottom pad is the primary heat path. The PCB footprint should include a copper pad matching the exposed area, connected through thermal vias to an inner-plane or backside copper pour. Without adequate thermal management, the 2.5 A drain current at 28 V can push the die beyond its safe operating area during sustained transmit.

Frequently asked questions

Is PD57018-E RoHS compliant?

Yes, PD57018-E is ROHS3 compliant.