PNP transistor for medium-voltage linear and switching stages
The MJE350 is a PNP bipolar power transistor in a through-hole SOT-32-3 (TO-126) package rated for 300 V collector-emitter breakdown and 500 mA continuous collector current. With a maximum power dissipation of 20.8 W and a junction temperature ceiling of 150 °C, the device suits medium-voltage linear regulators, solenoid drivers, and low-frequency switching stages where the load stays inside the safe-operating area at the operating point.
DC gain and cut-off characteristics at the operating point
Minimum DC current gain (hFE) is 30 at Ic = 50 mA and Vce = 10 V — the gain at the intended bias current should be verified against this minimum to ensure the base-drive margin is adequate over temperature. Collector cut-off current is specified at 100 µA maximum (ICBO), which sets the leakage floor in off-state and matters for high-impedance bias networks or shared pull-up rails.
Package and mounting for through-hole assembly
Supplied in Tube format, the device uses the TO-225AA / TO-126-3 footprint (also designated SOT-32-3) with through-hole mounting — the three-lead layout is common across TO-126-style sockets and PCB patterns, and the tab is typically connected to the collector for heatsinking.