ON Semiconductor MJD32CT4-A, PNP Bipolar Power Transistor, 100 V Vce, 3 A Ic, 15 W, DPAK (TO-252), Surface Mount, ROHS3 Compliant, Active.
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| FET type | PNP |
| Voltage - collector emitter breakdown | 100 V |
| Current - collector (Ic) | 3 A |
| Current - collector cutoff | 50µA |
| DC current gain (hFE) (Min) @ ic, vce | 10 @ 3A, 4V |
| Power - max | 15 W |
| Operating temperature | 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vce saturation (Max) @ ib, ic | 1.2V @ 375mA, 3A |
At 3 A collector current, the Vce saturation is 1.2 V with a base current of 375 mA. The minimum DC current gain (hFE) at 3 A, 4 V is 10.
The DPAK (TO-252) footprint is common and compact. The tab is the collector;
It is ROHS3 compliant, so no RoHS exemption paperwork is needed for EU-market builds. The suffix -A indicates a specific ON Semiconductor lead-free plating variant.
Yes, it is ROHS3 compliant.
The -A suffix indicates a lead-free (ROHS3) plating finish per ON Semiconductor's part-numbering convention. The base MJD32CT4 may use a tin-lead finish. Electrical ratings are identical.