Half-bridge gate driver in 14-SOIC — 4 A peak, 600 V bootstrap
The L6491D is a half-bridge gate driver from STMicroelectronics, rated for 4 A peak source and sink current with a 600 V maximum bootstrap voltage. It drives both IGBT and N-channel MOSFET gates in a half-bridge configuration, with independent non-inverting channels. Rise and fall times are 15 ns typical, which keeps switching losses low at carrier frequencies above 100 kHz — relevant for motor-drive VFDs, switch-mode power supplies, and DC-DC converters where the dead-time budget is tight.
Package, footprint, and temperature grade
The supplier device package is 14-SO, which is the same mechanical outline. Operating junction temperature range is -40°C to 125°C, which suits industrial motor drives, outdoor telecom rectifiers, and under-hood automotive inverter stages where ambient heat is a factor. The part is ROHS3 compliant, so no RoHS exemption paperwork is needed for EU or global BOMs.
Lifecycle and sourcing — active, no end-of-life notice
The L6491DTR is the tape-and-reel variant of the same die; electrically identical, same package, same ratings. If your pick-and-place line prefers reel, the DTR suffix is the drop-in alternative without a board spin.