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STMicroelectronics L6391D — Power Management (PMIC / Gate Driver)
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STMicroelectronics / Power Management (PMIC / Gate Driver)

L6391D Half-Bridge Gate Driver – 600V Bootstrap, 14-SOIC

MPN L6391D
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STMicroelectronics L6391D, half-bridge gate driver, 600V bootstrap, 290mA source / 430mA sink peak output, 14-SOIC (0.154", 3.90mm Width), active production.

In Stock: 2,000 pcs
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[SPEC] Essential Parameters Snapshot Full Specifications (14)
Package / Case 14-SOIC (0.154", 3.90mm Width)
Supply Voltage 12.5V ~ 20V

Full Technical Specifications

14 Parameters
L6391D specifications
Parameter / AttributeSpecification / Value
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
MountingSurface Mount
Supply voltage12.5V ~ 20V
Logic voltage - VIL, VIH1.1V, 1.9V
High side voltage - max (Bootstrap)600 V
Current - peak output (Source, sink)290mA, 430mA
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Case14-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)75ns, 35ns
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Technical Details & Description

Half-bridge gate driver for IGBT and N-channel MOSFET

The L6391D from STMicroelectronics is a half-bridge gate driver designed to drive IGBTs and N-channel MOSFETs in high-voltage applications. It integrates a bootstrap diode for the high-side supply, supporting a maximum bootstrap voltage of 600 V. The independent channel configuration drives two external power switches in a half-bridge topology, with non-inverting inputs that simplify control logic interface. The 75 ns typical rise time and 35 ns fall time keep switching losses manageable in the 10–100 kHz range. Supply voltage range is 12.5 V to 20 V, compatible with standard bias rails from auxiliary converters or bootstrap capacitors. Logic input thresholds are 1.1 V (VIL) and 1.9 V (VIH), directly interfacing with 3.3 V or 5 V MCU/FPGA outputs without level shifters.

The supplier device package is designated 14-SO.

Frequently asked questions

What is the L6391D used for?

It drives IGBTs and N-channel MOSFETs in half-bridge configurations — typical applications include motor drives, DC-DC converters, UPS inverters, and induction heating. The bootstrap voltage rating of 600 V suits single-phase and three-phase mains-powered designs.

Does the L6391D require an external bootstrap diode?

No — the bootstrap diode is integrated on-chip. Only an external bootstrap capacitor is needed between the bootstrap pin and the half-bridge output. The datasheet application section recommends a capacitor value based on the gate charge of the external power switch.

Is the L6391D a direct replacement for the IR2110?

The L6391D is a functional equivalent for many half-bridge applications, but pinout and logic thresholds differ. The IR2110 has a 10–20 V supply range and 1.2 A peak output; the L6391D operates from 12.5–20 V with 290 mA/430 mA peak output. Verify the PCB footprint and drive current requirements before substituting.

L6391D
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