Half-bridge gate driver for IGBT and N-channel MOSFET
The L6391D from STMicroelectronics is a half-bridge gate driver designed to drive IGBTs and N-channel MOSFETs in high-voltage applications. It integrates a bootstrap diode for the high-side supply, supporting a maximum bootstrap voltage of 600 V. The independent channel configuration drives two external power switches in a half-bridge topology, with non-inverting inputs that simplify control logic interface. The 75 ns typical rise time and 35 ns fall time keep switching losses manageable in the 10–100 kHz range. Supply voltage range is 12.5 V to 20 V, compatible with standard bias rails from auxiliary converters or bootstrap capacitors. Logic input thresholds are 1.1 V (VIL) and 1.9 V (VIH), directly interfacing with 3.3 V or 5 V MCU/FPGA outputs without level shifters.
The supplier device package is designated 14-SO.
