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STMicroelectronics IRF640FP — Discrete Semiconductors

IRF640FP N-Channel MOSFET, 200V 18A TO-220FP, Obsolete

MPNIRF640FP
Obsolete

IRF640FP, International Rectifier MESH OVERLAY™ N-Channel MOSFET, 200V Vdss, 18A Id, 180mOhm Rds(on) at 10V, TO-220-3 Full Pack through-hole package.

$1.8000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF640FP specifications
ParameterValue
SeriesMESH OVERLAY™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation40W (Tc)
Operating temperature150°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3 Full Pack
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs180mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs72 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1560 pF @ 25 V

Product details

200 V, 18 A N-channel in a fully isolated TO-220FP

Maximum power dissipation is 40 W at case temperature, and the junction temperature rating is 150°C.

The 200 V Vdss rating gives a comfortable derating margin for 48 V, 72 V, and 100 V bus rails in DC-DC converters, motor drives, and battery management circuits — typical applications for this voltage class. At 180 mOhm Rds(on) with 10 V gate drive, conduction losses at 9 A are about 14.6 W — well within the 40 W package limit at case temperature, but the TO-220FP's higher thermal resistance versus the standard TO-220 means the heatsink needs to be sized accordingly. Input capacitance of 1560 pF at 25 V Vds is moderate — a standard push-pull gate driver with 10 Ω to 22 Ω series resistor will give clean switching edges without excessive ringing.

Frequently asked questions

Is the IRF640FP obsolete?

Yes, the IRF640FP is listed with an Obsolete lifecycle status. New-old-stock and surplus inventory are the only supply channels.