IRF630

STMicroelectronics · MESH OVERLAY™ II Series

IRF630, MESH OVERLAY™ II Series, N-Channel MOSFET, 200V Vdss, 9A Id, 400mOhm Rds(on) at 10V, TO-220-3, Through Hole, -65°C to 150°C.

STMicroelectronics IRF630
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Technical specifications

IRF630 specifications
Parameter / AttributeSpecification / Value
SeriesMESH OVERLAY™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation75W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs400mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds700 pF @ 25 V

Technical details

IRF630
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