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STMicroelectronics IRF630

IRF630 N-Channel MOSFET, 200V 9A TO-220, Active

MPNIRF630
End of Life

IRF630, MESH OVERLAY™ II Series, N-Channel MOSFET, 200V Vdss, 9A Id, 400mOhm Rds(on) at 10V, TO-220-3, Through Hole, -65°C to 150°C.

$1.61Ref. price · indicative, final on quote
STMicroelectronics IRF630 datasheet (PDF)
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesMESH OVERLAY™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRF630 specifications
ParameterValue
SeriesMESH OVERLAY™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation75W (Tc)
Operating temperature-65°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs400mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs45 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds700 pF @ 25 V

Product details

IRF630 — 200V 9A N-Channel MOSFET in TO-220

It comes in a standard TO-220-3 through-hole package, making it a common choice for offline power supplies, DC-DC converters, and motor-drive output stages where the voltage and current fit within a 150 W dissipation envelope. The 10 V drive requirement means this is not a logic-level MOSFET — it expects a gate driver that can swing to 10 V for the lowest Rds(on). These numbers define the switching speed and the gate-drive power budget.

Where it fits — application and environment

The TO-220 package bolts to a heatsink with a single screw — common in open-frame power supplies and motor-drive heatsinks.

Sourcing and lifecycle — still in production

Frequently asked questions

How much current can the IRF630 handle?

The IRF630 is rated for 9 A continuous drain current at 25°C case temperature. The 75 W maximum power dissipation at case temperature 25°C is the practical limit — derate for your operating temperature and heatsink.

What is the difference between the IRF630 and the IRF640?

Both are 200 V N-channel MOSFETs in TO-220. The IRF640 is rated for 18 A continuous drain current with 180 mOhm Rds(on) maximum at 10 V, compared to the IRF630's 9 A and 400 mOhm. The IRF640 also has higher gate charge (67 nC vs 45 nC) and input capacitance (1300 pF vs 700 pF), which means slower switching at the same gate-drive current. The IRF640 is a better fit for higher-current loads where conduction loss matters more than switching speed.