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STMicroelectronics FERD40H100SFP

ST FERD40H100SFP FERD Diode, 100 V 40 A TO-220FPAB

MPNFERD40H100SFP
End of Life

STMicroelectronics FERD40H100SFP, EconoPACK™ 2 series, FERD (Field Effect Rectifier Diode), 100 V DC reverse, 40 A average rectified, 675 mV forward drop at 20 A, Standard Recovery >500 ns, TO-220-3 Full Pack, Through Hole, ROHS3 Compliant.

$1.62Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

FERD40H100SFP Technical Specifications
ParameterValue
SeriesEconoPACK™ 2
Diode typeFERD (Field Effect Rectifier Diode)
Mounting typeThrough Hole
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if675 mV @ 20 A
Current - reverse leakage @ vr190 µA @ 100 V
Current - average rectified40A
Operating temperature - junction175°C (Max)
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTube
CaseTO-220-3 Full Pack

Product details

100 V, 40 A FERD in a fully isolated TO-220

The STMicroelectronics FERD40H100SFP is a Field Effect Rectifier Diode (FERD) rated for 100 V DC reverse voltage and 40 A average rectified current. It is part of the EconoPACK™ 2 series and comes in a TO-220-3 Full Pack package (TO-220FPAB), which means the back tab is fully isolated — no insulating pad or washer is needed between the device and the heatsink. That saves a BOM line and a manual assembly step.

At 20 A forward current the maximum forward voltage is 675 mV. That is low for a 100 V / 40 A rectifier — the FERD structure trades a slightly higher reverse leakage for a lower Vf compared to a standard ultrafast diode of the same voltage class. The reverse leakage at 100 V is 190 µA, which is the price paid for that conduction loss advantage. The recovery speed is listed as Standard Recovery >500 ns at >200 mA. This is not a fast-recovery or ultrafast diode — it is meant for line-frequency rectification, not for a 100 kHz PFC boost stage.

Junction temperature and thermal management

The maximum junction temperature is 175 °C, which is the standard ceiling for silicon power diodes in industrial and motor-drive environments. The TO-220 Full Pack package has a higher thermal resistance than the standard TO-220 because the plastic encapsulation adds an insulating layer between the die and the heatsink. For a 40 A average current at elevated ambient, the heatsink must be sized to keep the junction below 150 °C in steady state to leave headroom for overload transients.

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