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STMicroelectronics FERD30M45CG-TR

ST FERD30M45CG-TR Diode Array, 45V 15A D²PAK

MPNFERD30M45CG-TR
End of Life

STMicroelectronics FERD30M45CG-TR, dual common-cathode Field Effect Rectifier Diode (FERD), 45 V reverse voltage, 15 A average rectified current per diode, 470 mV forward drop at 15 A, No Recovery Time > 500 mA, surface-mount D²PAK (TO-263AB) package.

$1.57Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

FERD30M45CG-TR Technical Specifications
ParameterValue
Mounting typeSurface Mount
Voltage - DC reverse (Vr)45 V
Voltage - forward (Vf) (Max) @ if470 mV @ 15 A
Current - reverse leakage @ vr600 µA @ 45 V
Current - average rectified (Io) (per diode)15A
Operating temperature - junction175°C (Max)
SpeedNo Recovery Time > 500mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyFERD (Field Effect Rectifier Diode)
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Diode configuration1 Pair Common Cathode

Product details

15 A per diode — where the current rating lands

The FERD30M45CG-TR is a dual common-cathode rectifier array from STMicroelectronics, built on their proprietary FERD (Field Effect Rectifier Diode) technology. Each of the two diodes is rated for 15 A average rectified current at a 45 V reverse voltage, with a forward voltage of 470 mV typical at that current. The common-cathode configuration makes it a direct fit for centre-tap secondary rectification in a push-pull or half-bridge converter, or as a pair of OR-ing diodes in a redundant power rail.

No Recovery Time — what the speed rating actually means

The 'No Recovery Time > 500 mA (Io)' spec means the diode exhibits negligible reverse recovery charge when switching from a forward current of 500 mA or less. In practice, this makes the part suited for the output stage of a switching power supply operating at 100 kHz or above, where a conventional ultrafast rectifier would still generate recovery losses. The FERD structure achieves this by limiting the minority carrier storage, giving a softer turn-off characteristic than a standard Schottky of the same voltage class.

D²PAK package — thermal and footprint reality

The D²PAK (TO-263AB) package is a surface-mount power package with a large exposed copper tab on the bottom. The tab is the cathode common terminal for both diodes, so the PCB copper area under the tab directly sets the junction-to-ambient thermal resistance. For a 30 A total output (15 A per die), the board needs a minimum of 6 cm² of 2-oz copper on the tab pad to keep the junction below 125 °C in still air. The package is rated for a maximum junction temperature of 175 °C, which provides headroom for surge conditions.

No official second source or pin-compatible replacement is listed by ST, but the common-cathode D²PAK footprint is a standard pinout shared by many dual Schottky and FERD rectifiers in the 30 A class.

Frequently asked questions

What is the difference between FERD30M45CG-TR and STPS30M45CG?

The STPS30M45CG is a dual Schottky rectifier with the same 45 V / 30 A rating and D²PAK footprint. The key difference is technology: the FERD part uses a Field Effect Rectifier structure that gives a lower forward voltage (470 mV vs ~550 mV typical for the Schottky at 15 A) and a softer recovery characteristic, at the expense of slightly higher reverse leakage at elevated temperatures. For high-frequency output rectification where conduction loss dominates, the FERD part is the better choice; for applications requiring lower leakage at high junction temperature, the Schottky variant may be pre

Is FERD30M45CG-TR suitable for high frequency applications?

Yes. The 'No Recovery Time > 500 mA (Io)' rating indicates negligible reverse recovery charge at moderate forward currents, which makes the diode suited for switching frequencies above 100 kHz where recovery losses in a standard PN or even some Schottky diodes would degrade efficiency. The FERD structure is designed for soft recovery in high-frequency power supplies.