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STMicroelectronics BYW100-200 — Discrete Semiconductors

BYW100-200 Fast Recovery Rectifier, 200V 1.5A 35ns trr

MPNBYW100-200
Obsolete

WeEn Semiconductor BYW100-200, Fast Recovery Rectifier, Standard, 200 V, 1.5 A, 1.2 V @ 4.5 A, 35 ns trr, Through Hole, DO-204AC (DO-15) Axial.

$0.5700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYW100-200 specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.2 V @ 4.5 A
Current - reverse leakage @ vr10 µA @ 200 V
Current - average rectified1.5A
Operating temperature - junction150°C(Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageCut Tape (CT); Tape & Box (TB)
CaseDO-204AC, DO-15, Axial
Reverse recovery time35 ns

Product details

The BYW100-200 is a standard fast-recovery rectifier diode from WeEn Semiconductor, rated for 200 V reverse voltage and 1.5 A average forward current. The 1.2 V forward drop at 4.5 A pulsed current gives a reasonable efficiency trade-off for that speed.

Obsolete — plan your BOM move now

DO-15 axial package — board-level fit

The diode comes in a DO-204AC (DO-15) axial-lead through-hole package, which is a common footprint for 1 A–2 A rectifiers. The through-hole mounting suits point-to-point wiring, terminal blocks, or boards where wave-solder assembly is the standard.

Reverse leakage and junction temperature

Maximum reverse leakage is 10 µA at the rated 200 V, which is typical for a fast-recovery silicon diode at room temperature.

Frequently asked questions

What is the replacement for BYW100-200?

A replacement must be a fast-recovery rectifier rated for at least 200 V reverse voltage, 1.5 A average forward current, and a reverse recovery time of 35 ns or faster in a DO-15 axial package. Validate any candidate against these three parameters before substituting.

What is the reverse recovery time (trr) of BYW100-200?

The reverse recovery time is 35 ns, which qualifies it as a fast-recovery diode (≤500 ns) suitable for switching power supplies operating in the tens to low hundreds of kilohertz.