Skip to main content
STMicroelectronics BYV541V-200 — Discrete Semiconductors

BYV541V-200 Fast Recovery Diode, 60 ns trr, 2x50A, ISOTOP

MPNBYV541V-200
Obsolete

NXP BYV541V-200 dual fast recovery diode, 2 independent 50A rectifiers, 200 V Vr, 60 ns trr, 850 mV Vf at 50 A, ISOTOP chassis mount, 150°C junction max.

$22.9900Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV541V-200 specifications
ParameterValue
MountingChassis Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if850 mV @ 50 A
Current - reverse leakage @ vr50 µA @ 200 V
Current - average rectified (Io) (per diode)50A
Operating temperature - junction150°C (Max)
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseISOTOP
Diode configuration2 Independent
Reverse recovery time60 ns

Product details

What this dual fast-recovery diode offers

The NXP BYV541V-200 is a dual fast-recovery rectifier in the ISOTOP chassis-mount package, housing two independent 50 A diodes with a common cathode configuration. Each diode is rated for 200 V reverse voltage and switches with a 60 ns reverse recovery time, placing it in the fast-recovery class for high-frequency rectification and freewheeling applications. Forward drop is specified at 850 mV at 50 A, which keeps conduction losses manageable at full load. The ISOTOP package bolts directly to a heatsink, making this part suited for power supplies, motor drives, and welding equipment where through-hole or surface-mount parts cannot handle the thermal load.

The fast-recovery classification (≤500 ns at >200 mA) is broad, but the actual 60 ns trr puts it in the same league as modern ultrafast diodes. In a boost PFC or output rectifier stage, that recovery speed reduces the snubber burden and keeps the switching node ringing under control. The 50 µA maximum reverse leakage at 200 V is typical for this voltage class and temperature.

If a drop-in replacement is needed, the closest functional match would be a dual 50 A, 200 V fast-recovery diode in the same ISOTOP footprint; parametric filtering against the 60 ns trr and 850 mV Vf will narrow the candidates.

Frequently asked questions

What is the reverse recovery time of BYV541V-200?

The BYV541V-200 has a reverse recovery time (trr) of 60 ns.

Is BYV541V-200 obsolete?

Yes, the BYV541V-200 is listed as Obsolete. NXP no longer produces it, and no official replacement part number has been designated. Sourcing is through independent surplus and broker channels.

What is the maximum reverse leakage current of BYV541V-200?

Maximum reverse leakage current is 50 µA at the rated reverse voltage of 200 V.