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STMicroelectronics BYV52PI-200RG — Discrete Semiconductors

BYV52PI-200RG Fast Recovery Diode, 200V 30A, 50ns trr

MPNBYV52PI-200RG
Obsolete

WeEn Semiconductors BYV52PI-200RG, Fast Recovery Diode, Standard type, 1 Pair Common Cathode, 200V Vr, 30A Io per diode, 50ns trr, 850mV Vf at 20A, Through Hole, TOP-3 Insulated package, -40°C~150°C junction.

STMicroelectronics BYV52PI-200RG datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYV52PI-200RG specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if850 mV @ 20 A
Current - reverse leakage @ vr25 µA @ 200 V
Current - average rectified (Io) (per diode)30A
Operating temperature - junction-40°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTOP-3 Insulated
Diode configuration1 Pair Common Cathode
Reverse recovery time50 ns

Product details

The 850 mV forward drop at 20 A (per diode) is a reasonable trade-off for the speed.

This part carries an official obsolete status. WeEn (formerly NXP/Philips discrete) no longer manufactures the BYV52PI-200RG. No direct factory replacement has been published under the BYV52PI base number; a functional replacement would need to match the 200 V / 30 A / 50 ns trr / common-cathode TOP-3I footprint.

Package and thermal interface — TOP-3I

The common-cathode configuration means both diodes share the same cathode connection through the tab, simplifying the heatsink wiring in a centre-tapped rectifier or PFC layout.

Frequently asked questions

Is the BYV52PI-200RG obsolete?

Yes, the BYV52PI-200RG is officially listed as obsolete. WeEn Semiconductors no longer manufactures it.

What is the reverse recovery time of the BYV52PI-200RG?

The reverse recovery time (trr) is 50 ns, making it suitable for fast-switching applications such as PFC boost stages and high-frequency rectification above 20 kHz.