STMicroelectronics BUL128D-B NPN power transistor, 400 V Vce breakdown, 4 A continuous collector current, 70 W max power dissipation, TO-220-3 through-hole package, active lifecycle, ROHS3 compliant.
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| FET type | NPN |
| Voltage - collector emitter breakdown | 400 V |
| Current - collector (Ic) | 4 A |
| Current - collector cutoff | 250µA |
| DC current gain (hFE) (Min) @ ic, vce | 12 @ 2A, 5V |
| Power - max | 70 W |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Case | TO-220-3 |
| Vce saturation (Max) @ ib, ic | 500mV @ 1A, 4A |
The STMicroelectronics BUL128D-B is a 400 V, 4 A NPN bipolar power transistor in a through-hole TO-220-3 package.
Vce(sat) is specified at 500 mV maximum with 1 A base current driving 4 A collector current.
The minimum DC current gain (hFE) is 12 at 2 A collector current with 5 V collector-emitter voltage. Typical gain will be higher, but the minimum is the figure to design the base drive around.