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STMicroelectronics BTW68-800RG — Discrete Semiconductors

STMicro BTW68-800RG SCR, 800V 30A, TOP-3

MPNBTW68-800RG
End of Life

STMicroelectronics BTW68-800RG standard recovery SCR, 800 V off-state, 30 A RMS on-state, 400 A/420 A non-repetitive surge, TOP-3 through-hole package, tube.

$8.62Ref. price · indicative, final on quote
PackagingTOP-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BTW68-800RG specifications
ParameterValue
SCR typeStandard Recovery
MountingThrough Hole
Voltage - off state800 V
Voltage - on state (Vtm)2.1 V
Voltage - gate trigger (Vgt)1.5 V
Current - hold (Ih)75 mA
Current - off state20 µA
Current - gate trigger (Igt)50 mA
Current - on state (It (AV))19 A
Current - on state (It (RMS))30 A
Current - non rep. surge 50, 60Hz400A, 420A
Operating temperature-40°C ~ 125°C
PackageTube
CaseTOP-3

Product details

Parametric fit and blocking capability

The BTW68-800RG is a standard-recovery SCR rated for 800 V off-state blocking and 30 A RMS on-state conduction. That 800 V Vdrm means it holds off rectified 480 VAC line peaks with margin — the 1.5× derating rule for inductive loads is satisfied without stacking devices. On-state voltage drop Vtm is 2.1 V max at the rated current; the conduction loss at 30 A RMS is roughly 63 W peak, which the TOP-3 copper tab dissipates into a heatsink. The 75 mA holding current ensures the device stays latched after the gate pulse drops, typical for phase-control circuits.

Surge ruggedness and gate drive

Non-repetitive surge current is 400 A at 50 Hz and 420 A at 60 Hz (half-sine wave, Tj initial 25 °C). This covers motor inrush, capacitor charging, and fuse-clearing events — the silicon junction absorbs the thermal transient without failure as long as the surge duration stays under 10 ms. Gate trigger current Igt is 50 mA max, gate trigger voltage Vgt 1.5 V max — compatible with standard 5 V logic driving a series resistor. The 20 µA off-state leakage at 800 V is negligible for standby power budgets.

Package and thermal path

TOP-3 (TO-247 style) through-hole package with a large metal tab — the case is the anode connection. The tab must be electrically isolated from the heatsink unless the circuit common is the anode rail.

Frequently asked questions

What is the closest functional second-source for BTW68-800RG?

The BTW68-800RG has no official second-source. Among the STMicroelectronics portfolio, the BTW68-1200RG is the same device with a 1200 V off-state rating — same TOP-3 package, same 30 A RMS current, same gate trigger specs. For an 800 V application, the BTW68-800RG is the correct voltage grade; the BTW69-800RG shares the same voltage but has a higher 80 mA gate trigger current.

What compliance documentation does STMicroelectronics provide for BTW68-800RG?

The BTW68-800RG is ROHS3 compliant. STMicroelectronics provides a declaration of conformity and material declaration upon request through the supply chain. No UL or IEC certification is listed in the manufacturer's standard documentation for this part.