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STMicroelectronics BDX53B — Discrete Semiconductors

BDX53B NPN Darlington Transistor, 80V 8A TO-220

MPNBDX53B
End of Life

BDX53B NPN Darlington transistor, 80 V VCEO, 8 A Ic, 60 W max, hFE 750 min at 3 A, TO-220-3, through hole, 150°C junction temperature.

$1.3Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BDX53B specifications
ParameterValue
MountingThrough Hole
FET typeNPN - Darlington
Voltage - collector emitter breakdown80 V
Current - collector (Ic)8 A
Current - collector cutoff500µA
DC current gain (hFE) (Min) @ ic, vce750 @ 3A, 3V
Power - max60 W
Operating temperature150°C (TJ)
PackageTube
CaseTO-220-3
Vce saturation (Max) @ ib, ic2V @ 12mA, 3A

Product details

The BDX53B is an NPN Darlington transistor in a TO-220 through-hole package, rated for 80 V collector-emitter breakdown and 8 A continuous collector current. The Darlington pair gives a minimum DC current gain of 750 at 3 A collector current and 3 V VCE, so the base drive requirement stays low — about 12 mA base current to saturate the output at 3 A. That gain margin means a simple microcontroller GPIO through a resistor can drive it, no separate driver stage needed. Maximum power dissipation is 60 W, which sets the thermal budget. In a TO-220 package that figure assumes the device is bolted to an infinite heatsink — real-world derating depends on the thermal interface and ambient.

Frequently asked questions

Is BDX53B equivalent to TIP122?

Both are NPN Darlington transistors in TO-220 packages with similar voltage and current ratings. The TIP122 is rated 100 V VCEO and 5 A Ic, while the BDX53B is rated 80 V VCEO and 8 A Ic. The BDX53B carries a higher continuous current rating but a lower voltage rating. Pin-compatible in the same TO-220 footprint, but the voltage and current limits differ — check the load conditions before substituting.