BDX53B

STMicroelectronics

BDX53B NPN Darlington transistor, 80 V VCEO, 8 A Ic, 60 W max, hFE 750 min at 3 A, TO-220-3, through hole, 150°C junction temperature.

STMicroelectronics BDX53B
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[IN STOCK] In Stock: 70 pcs
$0.76/ pc

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Technical specifications

BDX53B specifications
Parameter / AttributeSpecification / Value
MountingThrough Hole
FET typeNPN - Darlington
Voltage - collector emitter breakdown80 V
Current - collector (Ic)8 A
Current - collector cutoff500µA
DC current gain (hFE) (Min) @ ic, vce750 @ 3A, 3V
Power - max60 W
Operating temperature150°C (TJ)
PackageTube
CaseTO-220-3
Vce saturation (Max) @ ib, ic2V @ 12mA, 3A

Technical details

The BDX53B is an NPN Darlington transistor in a TO-220 through-hole package, rated for 80 V collector-emitter breakdown and 8 A continuous collector current. The Darlington pair gives a minimum DC current gain of 750 at 3 A collector current and 3 V VCE, so the base drive requirement stays low — about 12 mA base current to saturate the output at 3 A. That gain margin means a simple microcontroller GPIO through a resistor can drive it, no separate driver stage needed. Maximum power dissipation is 60 W, which sets the thermal budget. In a TO-220 package that figure assumes the device is bolted to an infinite heatsink — real-world derating depends on the thermal interface and ambient.

BDX53B
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