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STMicroelectronics BAT42

BAT42 Schottky Diode, 30 V, 200 mA, DO-35, 5 ns trr

MPNBAT42
End of Life

STMicroelectronics BAT42, Small Signal Schottky Diode, 30 V VR, 200 mA IF, 1 V Vf at 200 mA, 5 ns trr, 7 pF, DO-35 Axial, -65 to 125 °C junction.

$0.39Ref. price · indicative, final on quote
PackagingDO-204AH, DO-35, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BAT42 specifications
ParameterValue
Diode typeSchottky
MountingThrough Hole
Voltage - DC reverse (Vr)30 V
Voltage - forward (Vf) (Max) @ if1 V @ 200 mA
Current - reverse leakage @ vr500 nA @ 25 V
Current - average rectified200mA
Operating temperature - junction-65°C ~ 125°C
SpeedSmall Signal =< 200mA (Io), Any Speed
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-204AH, DO-35, Axial
Capacitance @ vr,7pF @ 1V, 1MHz
Reverse recovery time5 ns

Product details

Small-signal Schottky in a DO-35 axial body

The BAT42 is a small-signal Schottky barrier diode rated for 30 V reverse voltage and 200 mA average rectified current, housed in a through-hole DO-35 (DO-204AH) axial-lead glass package. Its 5 ns reverse recovery time and 7 pF junction capacitance at 1 V reverse bias make it suited for fast-switching low-current applications such as polarity protection, clamping, and high-speed signal rectification in mixed-signal or RF bias circuits.

Forward drop, leakage, and the operating window

Reverse leakage is specified at 500 nA maximum at 25 V reverse bias — 83 % of the 30 V Vr(max) rating — confirming the barrier quality holds near the voltage ceiling; leakage doubles roughly every 10 °C above 25 °C junction, so a design running at 85 °C ambient should budget 4-8 µA leakage per diode.

Frequently asked questions

What is the reverse recovery time of the BAT42?

Reverse recovery time is 5 ns.