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2STR1215

2STR1215 NPN Transistor, 15V 1.5A SOT-23-3

MPN2STR1215
End of Life

STMicroelectronics 2STR1215 NPN transistor, 15 V Vce breakdown, 1.5 A collector current, SOT-23-3 surface-mount package, 500 mW power dissipation.

$0.39Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

2STR1215 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown15 V
Current - collector (Ic)1.5 A
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce200 @ 500mA, 2V
Power - max500 mW
Operating temperature-65°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Vce saturation (Max) @ ib, ic850mV @ 200mA, 2A

Product details

Packaged in the compact SOT-23-3 surface-mount case, it suits low-to-medium power switching and linear applications where board space is tight. Typical uses include load switches, relay drivers, and signal amplification in circuits operating from a 12 V or lower rail.

The 1.5 A collector current rating is the continuous limit; for pulsed loads the device can handle higher peaks, but the 500 mW power dissipation ceiling sets the thermal boundary in a SOT-23-3 footprint. At 2 A collector current the Vce saturation is 850 mV — that is about 1.7 W instantaneous dissipation, so duty cycle must be kept low or the junction temperature will exceed the 150 °C maximum. DC current gain (hFE) is guaranteed minimum 200 at 500 mA collector current and 2 V Vce. That is a strong gain for a 1.5 A device, meaning base drive current can be kept low — typically under 5 mA to saturate the transistor at moderate loads. At lower collector currents the gain will be higher, but the datasheet typical curves should be consulted for exact values below 100 mA. The 100 nA maximum collector cutoff current (ICBO) is low enough for most switching circuits; it will not cause false turn-on in high-impedance base-drive configurations at room temperature. Leakage doubles roughly every 10 °C rise, so at 125 °C junction expect it in the microamp range — still acceptable for general-purpose use.

The 2STR1215 is supplied in the SOT-23-3 package (also designated TO-236-3 or SC-59). The small body (roughly 2.9 mm × 1.3 mm) allows dense board layouts, but the thermal resistance is higher than larger packages; the 500 mW power limit assumes a typical FR4 board with minimal copper area. For continuous operation near the maximum rating, adding copper pours on the collector pad helps spread heat.

It is ROHS3 compliant (lead-free, no restricted substances above threshold), so it ships globally without restriction.

Frequently asked questions

What is the hFE of 2STR1215?

The minimum DC current gain (hFE) is 200 at a collector current of 500 mA and Vce of 2 V. At lower currents the gain is typically higher.

Is 2STR1215 RoHS compliant?

Yes, the 2STR1215 is ROHS3 compliant, meeting the EU RoHS directive for lead-free and restricted-substance limits.