60 V, 350 mA N-channel — the TO-92 workhorse
The STMicroelectronics 2N7000 is an N-channel enhancement-mode MOSFET from the STripFET™ series, packaged in the through-hole TO-92-3 (TO-226AA). The 1 W maximum power dissipation at the case sets the thermal ceiling; in free air without a heatsink, the practical continuous current is derated well below 350 mA.
Obsolete — sourcing through independent channels
STMicroelectronics lists the 2N7000 as Obsolete. No official successor order code is provided in the lifecycle record. The part remains RoHS3 compliant, so it can be used in existing RoHS-compliant assemblies without exemption paperwork.
Gate charge and input capacitance — the switching-speed limiters
With a maximum gate charge of 2 nC at 5 V and input capacitance of 43 pF at 25 V drain-source, the 2N7000 switches quickly with modest gate-drive current. This means the part is fully enhanced by 5 V logic but does not guarantee full enhancement at 3.3 V — a 3.3 V gate drive may leave the FET in the linear region with higher Rds(on) than the datasheet maximum.
Temperature range and deployment context
The junction temperature range spans -55 °C to 150 °C, covering industrial and some automotive under-hood environments. The TO-92-3 through-hole package is a three-lead plastic package with 0.100-inch pitch — it mounts directly into a PCB or prototyping board without special handling. No moisture sensitivity level (MSL) rating applies to through-hole parts; no bake-out is required before assembly.