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STMicroelectronics 2N2907A — Discrete Semiconductors

2N2907A PNP Transistor, 60 V, 600 mA, TO-18, Obsolete

MPN2N2907A
Obsolete

2N2907A PNP general-purpose switching transistor, 60 V Vce breakdown, 600 mA collector current, 400 mW power dissipation, 200 MHz transition frequency, TO-206AA / TO-18-3 metal can, through-hole mount, 175°C junction temperature.

$0.3800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

2N2907A specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown60 V
Current - collector (Ic)600 mA
Current - collector cutoff10nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 150mA, 10V
Power - max400 mW
Frequency - transition200MHz
Operating temperature175°C (TJ)
PackageBulk
CaseTO-206AA, TO-18-3 Metal Can
Vce saturation (Max) @ ib, ic1.6V @ 50mA, 500mA

Product details

PNP switching transistor in a TO-18 can

The 2N2907A is a PNP general-purpose switching transistor in a TO-18 metal can package (TO-206AA). It's the higher-gain variant of the classic 2N2907, with a minimum DC current gain (hFE) of 100 at 150 mA collector current and 10 V Vce. Collector-emitter breakdown is rated at 60 V, collector current at 600 mA, and power dissipation at 400 mW — numbers that put it in the medium-current, medium-voltage sweet spot for switching loads, relay drivers, and linear regulators in older designs. The 200 MHz transition frequency means it handles modest-speed switching without trouble. Junction temperature is rated to 175°C, so it survives hot environments like engine bays or industrial cabinets, but the TO-18 metal can needs a heatsink or good airflow to dissipate that 400 mW at elevated ambient.

For a production BOM, you cannot order fresh factory stock. The part is available only through the surplus and independent distribution channel — which is exactly where we source it. If you are qualifying a replacement, the 2N2907A's close relatives — the 2N2907 (lower hFE floor) or the 2N2905A (same die in a TO-39 package) — are also obsolete. A modern SMD equivalent like the MMBT2907A (SOT-23) or PZT2907A (SOT-223) may be a better fit for new designs, but check the pinout and thermal derating.

The 60 V Vce breakdown gives you headroom for a 48 V rail or a 24 V inductive load with flyback. The 600 mA collector current is a continuous rating — don't plan on switching a 500 mA load at high duty cycle without looking at the SOA curve (not in this listing, but the datasheet's safe-operating-area graph is your friend). The 1.6 V Vce saturation at 50 mA base / 500 mA collector is typical for a PNP of this era; it means the transistor drops about 1.6 V when fully on, so at 500 mA you're dissipating 0.8 W in saturation alone — above the 400 mW package limit, so you need to pulse or heatsink. The 10 nA collector cutoff leakage is tight, good for high-impedance switching. The 200 MHz ft is fine for audio and low-speed PWM, but don't expect clean switching above a few MHz without base-drive shaping.

Frequently asked questions

Is 2N2907A obsolete?

Yes, the 2N2907A is listed as Obsolete. The manufacturer has discontinued production, and no last-time-buy window remains.

Can I use 2N2907 instead of 2N2907A?

Yes, the 2N2907 is the same PNP transistor in the same TO-18 package, but with a lower minimum hFE. The 2N2907A guarantees hFE ≥ 100 at 150 mA / 10 V, while the 2N2907 typically specifies hFE ≥ 50 at the same point. If your circuit can tolerate the lower gain, the 2N2907 is a direct pin-compatible swap. Both are obsolete.

What is the hFE of 2N2907A?

The minimum DC current gain (hFE) is 100 at a collector current of 150 mA and Vce of 10 V. Actual gain varies by batch and is typically higher, but the datasheet guarantees at least 100 at that test point.