Package and board-fit — 14-QFN with exposed paddle
The SI8274GB1-IM1 comes in a 14-VDFN package, supplier device package 14-QFN (5x5), surface-mount with an exposed thermal pad. The 5 mm × 5 mm footprint with a 0.65 mm typical pitch keeps the board area tight for a dual-channel isolator delivering 4 A peak gate drive. The exposed paddle must be soldered to a ground-plane copper pour to meet the thermal resistance the datasheet assumes — without it, the junction temperature at 125 °C ambient and full switching load will exceed the rated limit.
What the 4 A peak output and 200 kV/µs CMTI mean for the gate-drive decision
Rated 4 A peak output current and 1.8 A source / 4 A sink (high/low), this isolator drives the gate capacitance of medium-power SiC and GaN FETs without an external booster stage. The 200 kV/µs minimum common-mode transient immunity means the output stays latched when the half-bridge switching node slews at hundreds of kV/µs — the isolator does not false-trigger the power switch during hard commutation. Propagation delay is 75 ns max (high-to-low) and 60 ns max (low-to-high), with pulse-width distortion capped at 19 ns, so dead-time margins in the controller firmware can be set tighter than with slower optocoupler-based drivers.
Supply rails and temperature grade — wide-range output supply, industrial temperature
The output supply accepts 4.2 V to 30 V, covering standard gate-drive rails from 5 V logic-level FETs up to 15 V or 20 V for standard MOSFETs and IGBTs. Operating temperature spans -40 °C to 125 °C, which is the full industrial and automotive-underhood range. The part is rated for 2500 Vrms isolation, certified by CQC, CSA, UR, and VDE — accepted in equipment shipped to North America, Europe, and China without additional agency filing.
Active lifecycle and compliance — no obsolescence risk for new designs
Product status is Active, with RoHS3 compliance. For a BOM that needs a dual-channel isolated gate driver with 4 A peak drive and 200 kV/µs CMTI, this part is safe to design in today.