4 A peak drive with 200 kV/µs common-mode immunity
The SI8273DBD-IS1R is a 2-channel RF-coupled digital isolator from the Si827x series, designed to drive power-stage gates across a 2500 Vrms isolation barrier. Its 4 A peak output current charges gate capacitance faster than typical 1–2 A isolators, which matters when switching a large IGBT or SiC module where the Miller plateau stretches the turn-on edge. Common-mode transient immunity is rated at 200 kV/µs minimum — that is the slew rate the part can reject before the output glitches. In a motor-drive or inverter where the switching node jumps 600 V in 50 ns, a lower CMTI isolator would couple that edge across the barrier and false-trigger the gate driver. This part stays clean.
Timing symmetry for dead-time budgets
Propagation delay is 75 ns max for both rising and falling edges, with a pulse-width distortion of 8 ns max. That 8 ns spread is the mismatch between the two channels — in a half-bridge configuration, the dead-time must exceed this plus the driver's own turn-off delay to avoid shoot-through. The 10.5 ns rise and 13.3 ns fall times are typical, so the actual dead-time margin lands closer to the 8 ns spec than the raw rise/fall numbers. Output supply range spans 9.6 V to 30 V, covering standard gate-drive rails for Si MOSFETs (12 V), IGBTs (15 V), and SiC devices (18–20 V). The high-side and low-side channels share the same output supply pin, so both gates run from one bias rail.
Industrial temperature range and safety certifications
Safety approvals include CQC, CSA, UR, and VDE — the VDE mark indicates the part meets the reinforced insulation requirements of IEC 60747-17 for basic and reinforced isolation.
Product status is Active per the manufacturer.