Reinforced isolation for SiC and IGBT gate drive
The Skyworks SI8261BCD-C-IS is a single-channel gate-drive digital isolator delivering 4 A peak output current with 5000 Vrms reinforced isolation, built on a capacitive-coupling technology qualified to AEC-Q100 Automotive grade.
35 kV/µs CMTI — survives fast-switching edges
Common-mode transient immunity of 35 kV/µs minimum means the output does not glitch when the SiC or IGBT half-bridge switches at several hundred volts per nanosecond — a common failure mode with slower isolators in motor-drive and on-board charger applications. The 60 ns (typ) propagation delay and 28 ns pulse-width distortion give the dead-time insertion logic a predictable timing budget; at 100 kHz switching the delay represents about 0.6 % of the period. Rise and fall times of 5.5 ns and 8.5 ns respectively keep the gate-drive edge sharp enough to minimise switching loss without ringing the gate loop.
Active lifecycle — no obsolescence risk
Approvals from CQC, CSA, UR, and VDE confirm the safety isolation rating for worldwide regulatory acceptance — a prerequisite for CE-marked industrial and automotive power systems.
Package and supply rail
Housed in a 6-SOIC wide-body (7.50 mm body width) — the 8.7 mm creepage distance across the package supports the 5000 Vrms isolation rating without conformal coating. Output supply rail spans 13.5 V to 30 V, covering the typical gate-drive voltages for SiC (15 V to 20 V) and IGBT modules (15 V to 18 V).