Automotive gate-driver isolator for traction and DC-DC
The SI8261BBC-C-ISR: Rated for 3750Vrms isolation with a minimum common-mode transient immunity of 35kV/µs, it drives the gate of SiC or GaN FETs in traction inverters, on-board chargers, and high-voltage DC-DC converters where the ground potential between the controller and power stage shifts rapidly during switching transients.
4 A peak gate drive with tight timing
The output stage delivers 4 A peak current with source/sink capability of 500 mA and 1.2 A respectively, enough to charge and discharge the gate capacitance of a 650 V SiC MOSFET in under 50 ns — the 5.5 ns rise and 8.5 ns fall times (typical) keep switching losses low in a 100-200 kHz hard-switched bridge. Propagation delay is 60 ns (tpLH) and 50 ns (tpHL) maximum, with a pulse-width distortion ceiling of 28 ns — the matched delays across channels (this is a single-channel part, but the spec matters for interleaved or multi-phase designs using multiple isolators) keep the dead-time budget predictable.
Approvals include CQC, CSA, UR, and VDE, covering the regulatory requirements for safety-isolated gate-drive circuits in industrial and automotive equipment shipped to North America, China, and the EU.