Automotive-grade isolation with 5 kV withstand
The SI8261ABD-C-IS: 5000 Vrms isolation withstand per the capacitive coupling technology, backed by CQC, CSA, UR, and VDE approvals — accepted in North American, European, and Chinese regulatory jurisdictions. 35 kV/µs minimum common-mode transient immunity means the output does not glitch when fast-switching inverter nodes couple into the isolation barrier — critical for motor-drive and traction-inverter gate-drive circuits.
Gate-drive output: 600 mA peak, 9.4–30 V supply
Peak output drive of 600 mA, with 400 mA source and 600 mA sink capability, drives the gate capacitance of IGBTs and SiC MOSFETs directly — no external booster stage needed. Output supply range of 9.4 V to 30 V covers standard gate-drive bias rails — 12 V for IGBTs, 15 V for SiC, 18–20 V for high-current modules — without an intermediate regulator. Propagation delay of 60 ns (tpLH) and 50 ns (tpHL) max, with pulse-width distortion held to 28 ns — timing margins tight enough for switching frequencies above 100 kHz without dead-time correction.
Package and footprint — 6-SOIC wide-body
Surface-mount mounting, tube packaging — the tape-and-reel variant SI8261ABD-C-ISR uses the same die and qualification, so a single BOM line can switch between tube and reel without requalification.