Active gate-drive isolator with 6 A peak and 125 kV/µs CMTI
The SI823H6BB-IS1 is a 2-channel digital isolator from Skyworks' Si823Hx family, combining capacitive coupling with a 6 A peak output stage — enough to drive the gate of a medium-power MOSFET or IGBT directly without an external buffer. Its 125 kV/µs minimum common-mode transient immunity means the output stays clean when the switching node slews at tens of kV/µs — a common failure point in motor-drive and inverter designs where the high-side floating supply bounces hard. The 30 ns max propagation delay and 5 ns pulse-width distortion give the dead-time budget predictable margins; paired with the 12 ns rise/fall time, the part handles switching frequencies well into the hundreds of kHz without skew eating into the blanking interval.
Supply rails and temperature grade for industrial drives
The output supply range of 5.5 V to 30 V covers standard gate-drive rails — 12 V for IGBTs, 15 V for Si MOSFETs, or 20 V for SiC devices — while the input side runs from the isolator's internal supply (no separate VDDI pin needed on this variant). The 4 A source / 4 A sink current capability means it can charge and discharge a typical 10 nC gate capacitance in under 10 ns — fast enough to keep switching losses low in a 100 kHz LLC converter.