Isolated gate driver with 6 A peak drive and 125 kV/µs CMTI
The Skyworks Solutions SI823H2BB-IS1 is a 2-channel isolated gate driver in the Si823Hx family, built with capacitive coupling technology for 2500 Vrms isolation between input and output domains. Each channel delivers 6 A peak output current with symmetric 4 A source and 4 A sink capability, enough to drive the gate capacitance of medium-power IGBTs and SiC MOSFETs without an external booster stage. Propagation delay is 30 ns max with 5 ns pulse-width distortion, keeping dead-time margins tight in half-bridge and full-bridge topologies. Common-mode transient immunity is rated at 125 kV/µs minimum, so the output state holds steady during fast voltage swings on the isolated side — critical in motor-drive and inverter applications where the switching node slews at tens of kV/µs.
Temperature range, approvals, and package fit
The device carries CQC, CSA, UL, and VDE approvals, so it qualifies for equipment sold into North American, European, and Chinese markets without separate safety re-evaluation. The output supply range is 7 V to 8.2 V — a single 8 V rail powers the secondary side, simplifying the bias supply design.
Active lifecycle — no end-of-life risk
The part is ROHS3 compliant, meaning no restricted substances above exemption thresholds — no need to manage RoHS exemption expiry dates.