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Skyworks Solutions SI8238BB-D-IS1 — Digital Isolators

Skyworks SI8238BB-D-IS1 Digital Isolator, 2500Vrms, 4A

MPNSI8238BB-D-IS1
End of Life

Skyworks Solutions SI8238BB-D-IS1, dual-channel digital isolator with gate driver output, capacitive coupling, 2500Vrms isolation, 4A peak output, AEC-Q100 automotive grade, 16-SOIC.

$5.27Ref. price · indicative, final on quote
Packaging16-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

SI8238BB-D-IS1 specifications
ParameterValue
MountingSurface Mount
Voltage - isolation2500Vrms
Voltage - output supply9.4V ~ 24V
Current - peak output4A
Current - output high, low2A, 4A
Operating temperature-40°C ~ 125°C
Pulse width distortion5.6ns
Approval agencyCQC, CSA, UR, VDE
GradeAutomotive
PackageTube
TechnologyCapacitive Coupling
QualificationAEC-Q100
Case16-SOIC (0.154\", 3.90mm Width)
Channels2
Rise (Fall time)12ns, 12ns (Max)
Propagation delay tpLH (tpHL)60ns, 60ns
Common mode transient immunity20kV/µs

Product details

Automotive-grade gate-driver isolator for traction inverter and BMS signal chains

The Skyworks SI8238BB-D-IS1 is a dual-channel digital isolator with integrated gate-driver output, built on capacitive coupling technology and qualified to AEC-Q100 Grade 1 (-40°C to 125°C). It delivers 4A peak output current per channel, making it a fit for driving SiC and IGBT power switches in automotive traction inverters, on-board chargers, and battery-management isolation barriers.

2500Vrms isolation with 20kV/µs transient immunity

Rated for 2500Vrms isolation, the SI8238BB-D-IS1 provides basic insulation for 60V to 600V DC-link systems. The 20kV/µs minimum common-mode transient immunity (CMTI) means the output stays clean when the switching node slews through the isolation barrier — critical in hard-switched inverter stages where the dv/dt at the half-bridge midpoint can exceed 10kV/µs. Propagation delay is 60ns max (tpLH/tpHL) with a 5.6ns max pulse-width distortion, keeping the dead-time error budget tight enough for 100kHz+ PWM switching schemes. The 12ns rise/fall time into a capacitive load means the gate drive edge is fast enough to reduce switching losses in the power stage. Output supply range of 9.4V to 24V covers standard gate-drive rails for both Si MOSFETs (10-12V) and SiC devices (18-20V). The asymmetric high/low drive currents — 2A source, 4A sink — give the gate a stronger pull-down path, which helps prevent Miller turn-on during the switching transition.

Active production with tape-and-reel ordering option

For volume assembly, the tape-and-reel variant SI8238BB-D-IS1R uses the same die and package — identical electrical specs, same 16-SOIC footprint — just a different reel carrier. The tube-packaged SI8238BB-D-IS1 is the standard pick for prototype and low-volume builds.

Frequently asked questions

Where can I buy SI8238BB-D-IS1 and how do I get a price?

The SI8238BB-D-IS1 is sourced to order through independent distribution.