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Skyworks Solutions SI8235AB-D-IS1 — Digital Isolators

Skyworks SI8235AB-D-IS1 Digital Isolator, AEC-Q100, 4A

MPNSI8235AB-D-IS1
End of Life

Skyworks Solutions SI8235AB-D-IS1, dual-channel digital isolator with integrated gate drive, 2500Vrms isolation, 4A peak output, AEC-Q100 Grade, 16-SOIC, Tube.

$5.27Ref. price · indicative, final on quote
Packaging16-SOIC (0.154", 3.90mm Width)
StockIn Stock (23)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

SI8235AB-D-IS1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Voltage - isolation2500Vrms
Voltage - output supply6.5V ~ 24V
Current - peak output4A
Current - output high, low2A, 4A
Operating temperature-40°C ~ 125°C
Pulse width distortion5.6ns
Approval agencyCQC, CSA, UR, VDE
GradeAutomotive
PackageTube
TechnologyCapacitive Coupling
QualificationAEC-Q100
Case16-SOIC (0.154\", 3.90mm Width)
Number of channels2
Rise (Fall time)12ns, 12ns (Max)
Propagation delay tpLH (tpHL)60ns, 60ns
Common mode transient immunity20kV/µs

Product details

AEC-Q100 gate-drive isolator for automotive power stages

The Skyworks SI8235AB-D-IS1 is a dual-channel digital isolator with integrated gate-drive outputs, qualified to AEC-Q100 for automotive applications. Capacitive coupling technology provides 2500Vrms isolation between the logic input and the power-stage side. The 4A peak output current, with asymmetric 2A source and 4A sink capability, drives the gate charge of IGBTs and MOSFETs in traction inverters, DC-DC converters, and on-board chargers without an external buffer stage.

Isolation and transient immunity for noisy environments

Common-mode transient immunity (CMTI) is specified at 20kV/µs minimum — this is the key parameter for gate-drive isolators in half-bridge topologies where the high-side switch reference swings rapidly. A CMTI below the switching edge rate causes data corruption or latch-up; 20kV/µs covers SiC and GaN switching edges up to the 100V/ns range. Propagation delay is 60ns max (tpLH and tpHL), with pulse-width distortion held to 5.6ns max. This timing symmetry matters for dead-time control in synchronous rectification and motor-drive PWM — asymmetric delay shifts the effective duty cycle and increases circulating current. Rise and fall times are 12ns typical (12ns max) into the rated load, matching the switching speed of modern power semiconductors without excessive cross-conduction during the transition window.

Regulatory acceptance and supply-chain fit

Approved by CQC, CSA, UR, and VDE — these certifications cover the major industrial and automotive regulatory jurisdictions (China, North America, Germany) without requiring separate qualification per region. The output supply range of 6.5V to 24V allows the same BOM position to serve 12V and 24V automotive electrical systems, as well as 15V industrial gate-drive rails, without a supply-rail change.

Frequently asked questions

What is the difference between SI8235AB-D-IS1 and SI8235AB-D-IS1R?

The SI8235AB-D-IS1 ships in Tube packaging; the SI8235AB-D-IS1R is the same die, same AEC-Q100 qualification, same 2500Vrms isolation, and same 4A peak output, but supplied in Tape & Reel (TR) / Cut Tape (CT) / Digi-Reel format. The two are functionally identical and drop into the same 16-SOIC footprint.