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Sanken — Memory (DRAM / SRAM / Flash / EEPROM)

Sanken Memory (DRAM / SRAM / Flash / EEPROM) — 4 part numbers with specifications and datasheets. Filter by key specs and request a quote on ICBOMS.

DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 1.5A, 4V · 1000 @ 3A, 4V · 1000 @ 1A, 4V · 300 @ 500mA, 4V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 3mA, 1.5A · 2V @ 10mA, 3A · 2V @ 1.5mA, 1A · 1V @ 10mA, 1A
Voltage - Collector Emitter Breakdown (Max)
100V · 50V · 200V · 60V
Package / Case
12-SIP · 8-SIP · 10-SIP
Supplier Device Package
12-SIP · 8-SIP · 10-SIP
Transistor Type
4 NPN Darlington (Quad) · 3 PNP Darlington (Emitter Coupled) · 4 NPN (Quad)
Current - Collector (Ic) (Max)
3A · 4A
Current - Collector Cutoff (Max)
10µA (ICBO) · 100µA (ICBO)