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Renesas Electronics Corporation AT25XE041B-MHN-Y — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25XE041B-MHN-Y

MPNAT25XE041B-MHN-Y
Active
$1.2515Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AT25XE041B-MHN-Y specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage1.65V ~ 3.6V
Clock frequency85 MHz
Memory interfaceSPI
Operating temperature-40°C ~ 85°C (TC)
PackageTray
TechnologyFLASH
Memory size4Mbit
Memory formatFLASH
Case8-UDFN Exposed Pad
Memory organization512K x 8
Write cycle time - word, page8µs, 2.75ms