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Renesas Electronics Corporation AT25XE011-MAHN-T — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25XE011-MAHN-T

MPNAT25XE011-MAHN-T
Active
$1.3500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AT25XE011-MAHN-T specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage1.65V ~ 3.6V
Clock frequency104 MHz
Memory interfaceSPI
Operating temperature-40°C ~ 85°C (TC)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyFLASH
Memory size1Mbit
Memory formatFLASH
Case8-UFDFN Exposed Pad
Memory organization128K x 8
Write cycle time - word, page12µs, 3ms