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Renesas Electronics Corporation AT25SF161B-MHD-T — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25SF161B-MHD-T

MPNAT25SF161B-MHD-T
Active

8-PIN 5X6 DFN, IND TEP, 2.5V TO

$0.8200Ref. price · indicative, final on quote
Packaging8-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AT25SF161B-MHD-T specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Supply voltage2.5V ~ 3.6V
Clock frequency108 MHz
Memory interfaceSPI - Quad I/O
Operating temperature-40°C ~ 85°C (TC)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyFLASH - NOR
Access time6 ns
Memory size16Mbit
Memory formatFLASH
Case8-UDFN Exposed Pad
Memory organization2M x 8
Write cycle time - word, page5µs, 5ms