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Renesas Electronics Corporation AT25QL641-MHE-T — Memory (DRAM / SRAM / Flash / EEPROM)

Renesas Electronics Corporation AT25QL641-MHE-T

MPNAT25QL641-MHE-T
Active

64 MBIT, 1.8V (1.7V TO 2V), -40C

$2.6600Ref. price · indicative, final on quote
Packaging8-UDFN Exposed Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

AT25QL641-MHE-T specifications
ParameterValue
Memory typeNon-Volatile
MountingSurface Mount
Voltage1.7V ~ 2V
Frequency133 MHz
Memory interfaceSPI - Quad I/O, QPI
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR) Cut Tape (CT)
TechnologyFLASH - NOR (SLC)
Access time6 ns
Memory size64Mbit
Memory formatFLASH
Case8-UDFN Exposed Pad
Memory organization8M x 8
Write cycle time - word, page150µs, 5ms